A new gate current model accounting for a non-Maxwellian electron energy distribution function

We report on a new formulation to describe hot electron injection through gate dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function. We use the first three even moments of the Boltzmann equation n, T_n, and β_n found by the solution of a six moments transport model to describe the shape of the distribution function. Excellent agreement with results from rigorous Monte Carlo simulations and measurements is achieved.