Hot carrier induced degradation due to multi-phonon mechanism analyzed by lattice and device Monte Carlo coupled simulation

Author

Ho, Shim ; Ohkura, Yasuyuki ; Takuya, Maruizumi ; Prasad, Joshi ; Nakamura, Naoki ; Kubo, Shoichi

Author_Institution

Adv. Res. Lab., Hitachi Ltd., Kokubunji, Japan

fYear

2002

fDate

2002

Firstpage

243

Lastpage

246

Abstract

A new multi-phonon model for hydrogen desorption at Si/SiO₂ interface due to hot carriers is proposed for a multi-scale simulation, in which Lattice Monte Cairo method is coupled with Device Monte Cairo method by using a mediator-based common software platform. The power law between interface trap density and time (N_it∝t^a) is demonstrated which shows good agreement with experimental results. It is shown that the multi-phonon mechanism has significant effect on reliability of MOS devices with ultra-short gate under low applied voltage.

Keywords

MOSFET; Monte Carlo methods; elemental semiconductors; hot carriers; interface phonons; interface states; semiconductor device models; semiconductor device reliability; semiconductor-insulator boundaries; silicon; silicon compounds; MOS devices; Si-SiO₂; Si/SiO₂ interface; hot carrier induced degradation; interface trap density; lattice/device Monte Carlo coupled simulation; low applied voltage; mediator-based common software platform; multi-phonon mechanism; power law; reliability; ultra-short gate; Analytical models; Degradation; Electrodes; Electrons; Hot carriers; Hydrogen; Lattices; Monte Carlo methods; Particle scattering; Phonons;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

Print_ISBN

4-89114-027-5

Type

conf

DOI

10.1109/SISPAD.2002.1034564

Filename

1034564