Title :
Progress in predicting transient diffusion
Author_Institution :
Bell Labs., Lucent Technol., USA
Abstract :
Transient diffusion accounts for the majority of profile displacement in many modern processes. The last few years have seen considerable progress in understanding this anomalous diffusion, and predictive models have already been deployed in process development. Nevertheless, the evolving reduction in junction depth continues to challenge modeling capability. This work critically re-examines the theoretical basis of the present models and explores their limitations.
Keywords :
diffusion; doping profiles; semiconductor doping; semiconductor process modelling; dopant profile; junction depth; predictive model; transient diffusion; Artificial intelligence; Charge carrier processes; Electron mobility; Equations; Photonic band gap; Predictive models; Semiconductor process modeling; Silicon; Steady-state;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621322