DocumentCode :
2278883
Title :
Progress in predicting transient diffusion
Author :
Rafferty, C.
Author_Institution :
Bell Labs., Lucent Technol., USA
fYear :
1997
fDate :
8-10 Sept. 1997
Firstpage :
1
Lastpage :
4
Abstract :
Transient diffusion accounts for the majority of profile displacement in many modern processes. The last few years have seen considerable progress in understanding this anomalous diffusion, and predictive models have already been deployed in process development. Nevertheless, the evolving reduction in junction depth continues to challenge modeling capability. This work critically re-examines the theoretical basis of the present models and explores their limitations.
Keywords :
diffusion; doping profiles; semiconductor doping; semiconductor process modelling; dopant profile; junction depth; predictive model; transient diffusion; Artificial intelligence; Charge carrier processes; Electron mobility; Equations; Photonic band gap; Predictive models; Semiconductor process modeling; Silicon; Steady-state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
Type :
conf
DOI :
10.1109/SISPAD.1997.621322
Filename :
621322
Link To Document :
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