A silicon cantilever beam structure for the evaluation of d31, d33 and e31 piezoelectric coefficients of PZT thin films

Author

Herdiera, R. ; Jenkins, David ; Remiens, Denis ; Dupont, M. ; Osmont, D.

Author_Institution

IEMN, Villeneuve-d´´Ascq

fYear

2007

fDate

27-31 May 2007

Firstpage

725

Lastpage

727

Abstract

For optimal MEMS development it is essential to fundamentally characterise the electromechanical properties of piezoelectric thin films, such as lead zirconate titanate (PZT). A novel structure is presented to enable the piezoelectric coefficients d₃₁, d₃₃ and e₃₁ to be measured for the same film, along with its Young´s modulus (Y_p). By measuring displacement of a cantilever beam and its resonant frequency as a function of beam length, along with quasi-static displacement measurements, enables the coefficients to be determined.

Keywords

Young´s modulus; beams (structures); cantilevers; lead compounds; piezoelectric thin films; piezoelectricity; silicon; MEMS; PZT; Young´s modulus; electromechanical properties; lead zirconate titanate thin films; piezoelectric coefficients; quasistatic displacement; resonant frequency; silicon cantilever beam structure; Displacement measurement; Electrodes; Laser beams; Magnetic field measurement; Optical films; Piezoelectric films; Silicon; Sputtering; Structural beams; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393383

Filename

4393383