Title :
Finite element analysis of stress evolution in Si based front and back ends micro structures
Author :
Senez, Vincent ; Armigliato, Aldo ; Carlotti, Giovanni ; Carnevale, Gianpietro ; Jaouen, H. ; De Wolf, Ingrid
Author_Institution :
IEMN-ISEN, Villeneuve d´´Ascq, France
Abstract :
Nowadays, silicon technologies with feature sizes around 100 nm are used in the microelectronics industry to produce gigabits integrated circuits. The prime part of numerical simulation in their development is now well established. One of the purpose of the numerical analyses is the improvement of the mechanical reliability. We synthetize in this paper various works we have performed on the macroscopical modeling and simulation of stress problems and their effects in silicon technologies.
Keywords :
elemental semiconductors; finite element analysis; integrated circuit modelling; integrated circuit reliability; micromechanical devices; silicon; stress analysis; Si; Si technology; finite element analysis; gigabits integrated circuits; microelectronics industry; numerical simulation; stress evolution; Electron beams; Finite element methods; Geometry; Manufacturing; Microelectronics; Numerical models; Numerical simulation; Predictive models; Silicon; Stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034565
