DocumentCode
2278917
Title
An adaptive grid approach for the simulation of electromigration induced void migration
Author
Ceric, H. ; Selberherr, S.
Author_Institution
Inst. fur Microelectron., Technische Univ. Wien, Austria
fYear
2002
fDate
2002
Firstpage
253
Lastpage
256
Abstract
For tracking electromigration induced evolution of voids a diffuse interface model is applied. We assume an interconnect as two-dimensional electrically conducting via which contains initially a circular void. The diffuse interface governing equation was solved applying a finite element scheme with a robust local grid adaptation algorithm. Simulations were carried out for voids exposed to high current.
Keywords
electromigration; finite element analysis; integrated circuit interconnections; voids (solid); 2D electrically conducting via; circular void; diffuse interface model; electromigration; finite element scheme; interconnect; local grid adaptation algorithm; voids; Chemicals; Circuit simulation; Electromigration; Electrons; Equations; Finite element methods; Integrated circuit interconnections; Microelectronics; Robustness; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN
4-89114-027-5
Type
conf
DOI
10.1109/SISPAD.2002.1034566
Filename
1034566
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