DocumentCode
2278962
Title
On the thermal stability margins of high-leakage current packaged devices
Author
Lee, Chang-Chi ; de Groot, Jurriaan
Author_Institution
ASE group, Kaohsiung
fYear
2006
fDate
6-8 Dec. 2006
Firstpage
487
Lastpage
491
Abstract
In this paper, a graphical approach of fixed-point iteration is proposed to study the thermal stability of high leakage current, packaged devices. Following this approach, we can obtain the thermal properties of the device, and the margin the system has towards a thermal runaway point. Transient simulations with temperature-dependent power dissipations are also carried out to verify the validity of this approach. The impact of various factors on the thermal behavior are investigated, including ambient temperature, thetasJA of the package and the power consumption.
Keywords
iterative methods; leakage currents; semiconductor device packaging; thermal stability; fixed point iteration; high leakage current; packaged devices; thermal stability; Equations; Finite element methods; Leakage current; Packaging; Power dissipation; Silicon; Soldering; Temperature; Testing; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2006. EPTC '06. 8th
Conference_Location
Singapore
Print_ISBN
1-4244-0664-1
Electronic_ISBN
1-4244-0665-X
Type
conf
DOI
10.1109/EPTC.2006.342762
Filename
4147291
Link To Document