Title :
On density-gradient modeling of tunneling through insulators
Author :
Hohr, T. ; Schenk, A. ; Wettstein, A. ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
The density gradient model (DG) is tested for its ability to describe tunneling currents through thin insulating barriers. Simulations of single barriers (MOS diodes, MOSFETs) and double barriers show the limitations of the DG model. As a reference the Schrodinger-Bardeen method is taken. ´Resonant tunneling´ in the density gradient model turns out to be an artifact related to large density differences in the semiconductor regions.
Keywords :
MOSFET; resonant tunnelling; resonant tunnelling diodes; semiconductor device models; semiconductor diodes; MOS-diode; MOSFET; RTD; Schrodinger-Bardeen method; density gradient model; double barriers; resonant tunneling; single barriers; thin insulating barriers; tunneling currents; Charge carrier processes; Electronic mail; Insulation; Laboratories; MOSFETs; Modeling; Partial differential equations; Poisson equations; Schrodinger equation; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034571
