Asymmetry in effective-channel length of n- and p-MOSFETs

We have shown that there is a fundamental asymmetry in the effective-channel lengths of n-FET and p-FET devices. Basic differences in electron and hole transport give rise to a larger effective channel length for n-FETs. This can also be observed through a comparison of the device sheet resistance where the relative difference in channel to source/drain mobility leads to distinct sheet rho patterns near the metallurgical junction. Recent investigations in current flow patterns in the source/drain regions (to be reported elsewhere) has further substantiated these findings.