Title :
Use of accurate MOS models for optimizing resonant converter designs
Author :
Franz, Gerhard A. ; Walden, John P. ; Scott, R. Steven ; Bicknell, William H. ; Steigerwald, Robert L.
Author_Institution :
General Electric Co., Schenectady, NY, USA
Abstract :
AC and DC power MOSFET models for the design of resonant power converters are described. The influence of device parameters on the circuit performance is investigated in detail. A 1 MHz resonant converter circuit is simulated, and circuit waveforms are shown to agree with breadboard measurements with a high level of accuracy. Thus, design optimization can be performed through simulations without the need of breadboard iterations.<>
Keywords :
insulated gate field effect transistors; power convertors; power transistors; semiconductor device models; 1 MHz; AC power MOSFET models; DC power MOSFET models; MOS models; breadboard measurements; circuit waveforms; resonant converter designs; Capacitance; Circuit optimization; Circuit simulation; Circuit synthesis; Costs; Design optimization; Power MOSFET; Prototypes; RLC circuits; Resonance;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152394
