DocumentCode
2279234
Title
Use of accurate MOS models for optimizing resonant converter designs
Author
Franz, Gerhard A. ; Walden, John P. ; Scott, R. Steven ; Bicknell, William H. ; Steigerwald, Robert L.
Author_Institution
General Electric Co., Schenectady, NY, USA
fYear
1990
fDate
7-12 Oct. 1990
Firstpage
1564
Abstract
AC and DC power MOSFET models for the design of resonant power converters are described. The influence of device parameters on the circuit performance is investigated in detail. A 1 MHz resonant converter circuit is simulated, and circuit waveforms are shown to agree with breadboard measurements with a high level of accuracy. Thus, design optimization can be performed through simulations without the need of breadboard iterations.<>
Keywords
insulated gate field effect transistors; power convertors; power transistors; semiconductor device models; 1 MHz; AC power MOSFET models; DC power MOSFET models; MOS models; breadboard measurements; circuit waveforms; resonant converter designs; Capacitance; Circuit optimization; Circuit simulation; Circuit synthesis; Costs; Design optimization; Power MOSFET; Prototypes; RLC circuits; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location
Seattle, WA, USA
Print_ISBN
0-87942-553-9
Type
conf
DOI
10.1109/IAS.1990.152394
Filename
152394
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