• DocumentCode
    2279379
  • Title

    Characterization of low temperature processing and high density integrated capacitor on organic substrate

  • Author

    Fan, W. ; Lok, B.K. ; Lu, Albert C W ; Wai, L.L.

  • Author_Institution
    Singapore Inst. of Manuf. Technol.
  • fYear
    2006
  • fDate
    6-8 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Rapidly growing performance and mixed-signal integration is driving the need for product and component miniaturization in electronics applications. Integral passive technology is a potentially attractive solution to replace discrete passives. Capacitors are widely used for broad range of applications including filtering, tuning and power-bus decoupling. This paper presents the performance characterization of low temperature process which is compatible with organic substrates. RF characterization up to 10 GHz was performed to extract the impedance profile, effective capacitance and capacitance density parameters. The capacitors were also characterized under different temperature from 25degC to 150degC.
  • Keywords
    capacitors; electronics packaging; low-temperature techniques; substrates; 25 to 150 C; RF characterization; capacitance density parameters; high density integrated capacitor; impedance profile; low temperature processing; organic substrate; Capacitance; Capacitors; Copper; Dielectric materials; Dielectric substrates; Electrodes; Frequency; Printing; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2006. EPTC '06. 8th
  • Conference_Location
    Singapore
  • Print_ISBN
    1-4244-0664-1
  • Electronic_ISBN
    1-4244-0665-X
  • Type

    conf

  • DOI
    10.1109/EPTC.2006.342787
  • Filename
    4147316