DocumentCode
2279379
Title
Characterization of low temperature processing and high density integrated capacitor on organic substrate
Author
Fan, W. ; Lok, B.K. ; Lu, Albert C W ; Wai, L.L.
Author_Institution
Singapore Inst. of Manuf. Technol.
fYear
2006
fDate
6-8 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
Rapidly growing performance and mixed-signal integration is driving the need for product and component miniaturization in electronics applications. Integral passive technology is a potentially attractive solution to replace discrete passives. Capacitors are widely used for broad range of applications including filtering, tuning and power-bus decoupling. This paper presents the performance characterization of low temperature process which is compatible with organic substrates. RF characterization up to 10 GHz was performed to extract the impedance profile, effective capacitance and capacitance density parameters. The capacitors were also characterized under different temperature from 25degC to 150degC.
Keywords
capacitors; electronics packaging; low-temperature techniques; substrates; 25 to 150 C; RF characterization; capacitance density parameters; high density integrated capacitor; impedance profile; low temperature processing; organic substrate; Capacitance; Capacitors; Copper; Dielectric materials; Dielectric substrates; Electrodes; Frequency; Printing; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2006. EPTC '06. 8th
Conference_Location
Singapore
Print_ISBN
1-4244-0664-1
Electronic_ISBN
1-4244-0665-X
Type
conf
DOI
10.1109/EPTC.2006.342787
Filename
4147316
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