Title :
Simulation of power rectifiers in SPICE
Author :
McMurray, William
Abstract :
The behavior of the SPICE BJT model in the reverse-recovery model of operation is analyzed, and a procedure for selecting the parameters from published or measured rectifier recovery test data is presented. Simulation of the resulting model in a typical test circuit verifies the technique by comparing the results with the original data. A method of selecting other model parameters to fit the forward drop of a rectifier is discussed.<>
Keywords :
bipolar transistors; circuit analysis computing; power transistors; rectifying circuits; semiconductor device models; SPICE; bipolar junction transistors; forward drop; power rectifiers; reverse-recovery model; test circuit; Capacitance; Circuit simulation; Circuit testing; Diodes; Electric resistance; Laplace equations; Power engineering and energy; Rectifiers; SPICE; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152395
