Title :
Abnormal thyristor forward voltage behaviour: numerical simulation and analytic theory
Author :
Gerstenmaier, Y.C. ; Pfirsch, F.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
The on-state current voltage characteristic of thyristors is investigated by numerical one-dimensional simulation. For sufficiently high p-base concentration, an abrupt increase in on-state voltage is observed above a critical current density. By driving the device to higher currents, a reduction of on-state voltage occurs. Similar results are obtained for thyristor profiles with very shallow emitters. An analytic model is presented that explains the phenomena from first principles and leads to a simple criterion for current limiting in terms of Gummel-numbers and carrier mobilities.<>
Keywords :
carrier mobility; semiconductor device models; simulation; thyristors; Gummel-numbers; analytic theory; carrier mobilities; critical current density; current limiting; numerical simulation; on-state current voltage characteristic; one-dimensional simulation; p-base concentration; thyristor forward voltage behaviour; Charge carrier density; Charge carrier processes; Current limiters; Doping; Electron mobility; Laboratories; Numerical simulation; Temperature; Thyristors; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152396
