Title :
Characteristics of MOS-controlled thyristors under zero voltage soft-sw-ing conditions
Author :
De Doncker, Rik W. ; Jahns, T.M. ; Radun, A.V. ; Watrous, D.L. ; Temple, V.A.
Author_Institution :
General Electric Co., Schenectady, NY, USA
Abstract :
MOS-controlled thyristor (MCT) characterizations, as they relate to their dynamic performance during zero voltage switching, are reviewed. A test circuit that enables characterization of the zero voltage turn-on and turn-off losses of the device is described. Behavior models are presented and evaluated to predict the MCT turn-off losses under various soft-switching conditions. These models are shown to be useful for optimizing device performance in high frequency soft-switching converters.<>
Keywords :
metal-insulator-semiconductor devices; power convertors; thyristors; MOS-controlled thyristors; high frequency soft-switching converters; test circuit; turn-off losses; turn-on losses; zero voltage soft-sw-ing conditions; Circuit testing; MOSFETs; Packaging; Research and development; Resonance; Semiconductor diodes; Switching converters; Switching loss; Thyristors; Zero voltage switching;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152400
