A high-speed H-Bridge circuit based on GaN HFETs and custom resonant gate drivers

Author

Wang, Bo ; Monti, Antonello ; Riva, Marco

Author_Institution

Univ. of South Carolina, Columbia, SC, USA

fYear

2009

fDate

20-24 Sept. 2009

Firstpage

973

Lastpage

978

Abstract

The paper describes a high-speed high efficiency H-bridge circuit based upon Gallium nitride (GaN) Heterostructure Field-Effect Transistor (HFET) devices as power switches. The use of a new designed driver integrated circuit (IC) makes it possible to exploit the capabilities and advantages of GaN technology in power electronic applications by means of a smart and convenient implementation. Low power losses small size and high reliability are the main advantages of which the design of power systems can benefit. A full discussion of the design and of the experimental results of a DC to AC H-bridge inverter concludes the paper.

Keywords

AC motors; DC motors; III-V semiconductors; bridge circuits; driver circuits; gallium compounds; high electron mobility transistors; power electronics; power semiconductor switches; resonant invertors; AC H-bridge inverter; DC H-bridge inverter; GaN; HFET device; custom resonant gate driver; driver integrated circuit; heterostructure field-effect transistor; high efficiency H-bridge circuit; high-speed H-bridge circuit; power electronics; power switch; GaN HFET; H-Bridge; High-speed;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-2893-9

Electronic_ISBN

978-1-4244-2893-9

Type

conf

DOI

10.1109/ECCE.2009.5316361

Filename

5316361