DocumentCode
2279716
Title
Advanced GaAs MMIC technology development at WIN Semiconductors corporation
Author
Wang, Yu-Chi ; Chertouk, Mourad ; Cheang, Peter ; Tu, Der-Wei ; Chao, P.C. ; Wu, Chan Shin
Author_Institution
WIN Semicond. Corp., Tao Yuan Shien, Taiwan
Volume
1
fYear
2001
fDate
2001
Firstpage
121
Abstract
WIN Semiconductors has successfully developed and demonstrated high performance and highly manufacturable HBT and pHEMT technologies in a short period of time. This indicates the advanced GaAs MMIC technology development is taking shape in Taiwan. WIN Semiconductors is dedicated to continuing the development efforts and to providing best GaAs technologies to the community
Keywords
HEMT integrated circuits; III-V semiconductors; bipolar MMIC; field effect MMIC; gallium arsenide; GaAs; HBT technologies; MMIC technology; Taiwan; WIN Semiconductors; development efforts; pHEMT technologies; Fingers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; PHEMTs; Personal communication networks; Production; Semiconductor optical amplifiers; Telephone sets; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location
Taipei
Print_ISBN
0-7803-7138-0
Type
conf
DOI
10.1109/APMC.2001.985603
Filename
985603
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