Title :
Advanced GaAs MMIC technology development at WIN Semiconductors corporation
Author :
Wang, Yu-Chi ; Chertouk, Mourad ; Cheang, Peter ; Tu, Der-Wei ; Chao, P.C. ; Wu, Chan Shin
Author_Institution :
WIN Semicond. Corp., Tao Yuan Shien, Taiwan
Abstract :
WIN Semiconductors has successfully developed and demonstrated high performance and highly manufacturable HBT and pHEMT technologies in a short period of time. This indicates the advanced GaAs MMIC technology development is taking shape in Taiwan. WIN Semiconductors is dedicated to continuing the development efforts and to providing best GaAs technologies to the community
Keywords :
HEMT integrated circuits; III-V semiconductors; bipolar MMIC; field effect MMIC; gallium arsenide; GaAs; HBT technologies; MMIC technology; Taiwan; WIN Semiconductors; development efforts; pHEMT technologies; Fingers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; PHEMTs; Personal communication networks; Production; Semiconductor optical amplifiers; Telephone sets; Testing;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985603
