Title :
Ka-band monolithic GaAs PHEMT low noise and driver amplifiers
Abstract :
This paper presents the designs and measurement results of two monolithic microwave integrated circuit (MMIC) amplifiers. The driver amplifier demonstrated a measured gain of 8-11 dB from 9 to 25 GHz with a measured output P1dB of 12 dBm at 13.2 GHz. The LNA shows a linear gain of 28 dB with 3-dB noise figure from 25 to 35 GHz. The MMIC chips are fabricated with a 0.15-μm gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology carried out by commercially available foundry
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; driver circuits; field effect MMIC; gallium arsenide; 0.15 micron; 13.2 GHz; 25 to 35 GHz; 28 dB; 3 dB; 8 to 11 dB; 9 to 25 GHz; GaAs; Ka-band; PHEMT amplifiers; driver amplifiers; gate-length pseudomorphic HEMT; linear gain; low noise amplifiers; monolithic microwave integrated circuit; Driver circuits; Gain measurement; Gallium arsenide; Integrated circuit measurements; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave measurements; PHEMTs; Semiconductor device measurement;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985607
