DocumentCode
2279801
Title
Electrical simulation research for IC package gold bonding wire
Author
Yusheng, Cao ; Shuan, Du ; Quanbin, Yao ; Yuanfu, Zhao
Author_Institution
Beijing Microelectron. Technol. Inst., Beijing, China
fYear
2010
fDate
16-19 Aug. 2010
Firstpage
781
Lastpage
783
Abstract
With the development of semiconductor technology, the IC frequency become higher and higher, and the IC package become more and more importance. Currently, the wiring bonding is mainly used to connect die and package pads, so parasitical parameter of bonding wire must be considered especially for RFIC and MMIC component. It was discussed by finite element simulation and analysis in this paper that the different standard gold bonding wires have different effects on the parasitical parameter and the electrical performance of one ideal amplifier.
Keywords
bonding processes; integrated circuit packaging; IC frequency; IC package gold bonding wire; MMIC component; RFIC; electrical simulation research; finite element simulation; semiconductor technology; wiring bonding; Bonding; Capacitance; Inductance; Integrated circuit modeling; Packaging; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4244-8140-8
Type
conf
DOI
10.1109/ICEPT.2010.5582699
Filename
5582699
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