• DocumentCode
    2279801
  • Title

    Electrical simulation research for IC package gold bonding wire

  • Author

    Yusheng, Cao ; Shuan, Du ; Quanbin, Yao ; Yuanfu, Zhao

  • Author_Institution
    Beijing Microelectron. Technol. Inst., Beijing, China
  • fYear
    2010
  • fDate
    16-19 Aug. 2010
  • Firstpage
    781
  • Lastpage
    783
  • Abstract
    With the development of semiconductor technology, the IC frequency become higher and higher, and the IC package become more and more importance. Currently, the wiring bonding is mainly used to connect die and package pads, so parasitical parameter of bonding wire must be considered especially for RFIC and MMIC component. It was discussed by finite element simulation and analysis in this paper that the different standard gold bonding wires have different effects on the parasitical parameter and the electrical performance of one ideal amplifier.
  • Keywords
    bonding processes; integrated circuit packaging; IC frequency; IC package gold bonding wire; MMIC component; RFIC; electrical simulation research; finite element simulation; semiconductor technology; wiring bonding; Bonding; Capacitance; Inductance; Integrated circuit modeling; Packaging; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-8140-8
  • Type

    conf

  • DOI
    10.1109/ICEPT.2010.5582699
  • Filename
    5582699