Analysis of channel-width effects in 0.3 /spl mu/m ultra-thin SOI NMOSFETs

Author

Chang-Hoon Choi ; Sang-Hoon Lee ; Il-Kwon Kim ; Young-Kwan Park ; Jeong-Taek Kong

Author_Institution

CAE, Samsung Electron. Co. Ltd., Kyungki, South Korea

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

37

Lastpage

40

Abstract

Experiment-based new phenomena, such as LIF energy and channel width effects in ultra-thin (T/sub Si/=700 /spl Aring/) 0.3 /spl mu/m SOI NMOSFETs, are analysed using TCAD tools. The relatively higher doping profile along with the width direction silicon edge can improve the breakdown characteristics (i.e., BV/spl cong/9 V at W/L=0.4 um/0.3 um). This effect, which does not coincide with typical BV characteristics in very-small SOIs, is caused by the reduction of the impact ionization rate due to the doping and geometric effects of the silicon edge as the channel-width becomes narrower. It implies that very small SOI NMOSFETs can be well adopted for the ultra-high density DRAM cells when an optimised doping profile is provided.

Keywords

CAD; MOSFET; doping profiles; impact ionisation; semiconductor device models; semiconductor doping; silicon-on-insulator; 0.3 micron; BV characteristics; LIF energy; TCAD; breakdown; channel width effect; doping profile; geometric effect; impact ionization; silicon edge; ultra-high density DRAM cell; ultra-thin SOI NMOSFET; Analytical models; Computer aided engineering; Doping profiles; Electric breakdown; Geometry; Isolation technology; MOSFETs; Random access memory; Research and development; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621330

Filename

621330