DocumentCode :
2279917
Title :
Magneto-resistance oscillations and zero-resistance states induced by photo-excitation in the quasi two-dimensional GaAs/AlGaAs system
Author :
Mani, R.G.
Author_Institution :
Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA
fYear :
2008
fDate :
8-13 June 2008
Firstpage :
496
Lastpage :
497
Abstract :
Photo-excitation of high quality two dimensional electron systems induces "1/4 cycle shifted" inverse- B-periodic magnetoresistance oscillations with nodes in the resistance at Bf / j for the fundamental series, where j is a positive integer or half integer, Bf is the characteristic magnetic field that increases with the radiation frequency, f, as Bf = 2pi f m*/e, m* is an electron effective mass, and e is the electron charge. At the lowest temperatures and modest magnetic fields, vanishing diagonal resistance is observed at the resistance minima as in the quantum Hall situation, without concomitant plateaus in the Hall effect. Here, we describe and review the remarkable features of these novel effects.
Keywords :
III-V semiconductors; aluminium compounds; effective mass; gallium arsenide; magnetoresistance; quantum Hall effect; GaAs-AlGaAs; electron charge; electron effective mass; inverse-B-periodic magnetoresistance oscillations; magnetic field; photoexcitation; quantum Hall effect; quasi2D system; radiation frequency; zero-resistance states; Conductivity; Effective mass; Electric resistance; Electron mobility; Frequency; Gallium arsenide; Hall effect; Magnetoresistance; Physics; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-2399-6
Electronic_ISBN :
978-1-4244-2400-9
Type :
conf
DOI :
10.1109/CPEM.2008.4574870
Filename :
4574870
Link To Document :
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