A new design of voltage controlled dielectric resonator oscillator using three-terminal MESFET varactor

Author

Lee, Joo Yeol ; Hong, UISeok

Author_Institution

Dept. of Electron. & Commun. Eng., Kwangwoon Univ., Seoul, South Korea

Volume

1

fYear

1994

fDate

14-18 Nov 1994

Firstpage

265

Abstract

The MESFET can be used as a three-terminal MESFET varactor by employing the gate depletion capacitance Cg. A new VCDRO (voltage controlled dielectric 0.0 resonator oscillator) is designed to apply VCDRO with this concept. The VCDRO produced 10.17 dBm output power at a frequency of 11.00 GHz and tuning bandwidth of 70.2 MHz. The advantage of using the MESFET as a three-terminal varactor is to let the MESFET play both roles at the same time, thus simplifying the circuit configuration and fabrication. This finding demonstrates the potential of using both real and imaginary parts of the equivalent impedance of the active device

Keywords

MESFET circuits; capacitance; circuit tuning; dielectric resonator oscillators; microwave oscillators; varactors; variable-frequency oscillators; voltage-controlled oscillators; 11 GHz; 70.2 MHz; PLL oscillator; SHF; VCDRO; active device; circuit configuration; circuit fabrication; digital microwave communication systems; equivalent impedance; frequency; gate depletion capacitance; imaginary parts; output power; real parts; three-terminal MESFET varactor; tuning bandwidth; voltage controlled dielectric resonator oscillator; Capacitance; Circuit optimization; Dielectrics; Frequency; MESFET circuits; Power generation; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Singapore ICCS '94. Conference Proceedings.

Print_ISBN

0-7803-2046-8

Type

conf

DOI

10.1109/ICCS.1994.474065

Filename

474065