A robust and accurate drain current I-V model for MESFET

Author

Ooi, B.L. ; Ma, J.Y. ; Leong, M.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

1

fYear

2001

fDate

2001

Firstpage

236

Abstract

A new empirical model has been developed to more accurately model the DC I-V characteristics of a GaAs MESFET. The new model equations describe device drain current as a polynomial of the effective gate-source voltage V_eff. It is capable of accurately modeling the device current-voltage behaviour at different operation regions. In particular, the device operation around the pinch-off region is more accurately described through the use of a specially designed transformation. Measured and modelled results are compared, and good agreement has been obtained. Comparisons between the proposed model, the Curtice model and the Chalmers model are also made

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; microwave field effect transistors; semiconductor device models; GaAs; GaAs MESFET; GaAs microwave transistor; current-voltage behaviour; drain current I-V model; effective gate-source voltage; empirical model; large signal model; model equations; model parameter extraction; pinch-off region; polynomial; Equations; Equivalent circuits; Gallium arsenide; Intrusion detection; MESFET circuits; Polynomials; Robustness; Solid modeling; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985630

Filename

985630