Title :
Driving and protection of high side NMOS power switches
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
The design of a full-wave voltage-tripler charge pump for driving high-side NMOS switches that can operate with supply voltage variations from 5 to 50 V is described. The circuits for both simple and complex charge pumps and their limitations are discussed. It is shown that the power switch must be protected from external as well as internal voltages. Described are the protection circuits that are necessary to ensure that the working voltage of the control devices and power switch are not exceeded, particularly when working with inductive loads and against supply line transients.<>
Keywords :
MOS integrated circuits; driver circuits; protection; 5 to 50 V; charge pumps; full-wave voltage-tripler charge pump; high side NMOS power switches; inductive loads; protection circuits; supply line transients; supply voltage variations; Charge pumps; Diodes; Driver circuits; MOS capacitors; MOS devices; MOSFETs; Protection; Research and development; Switches; Voltage control;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152404
