DocumentCode
2280186
Title
Novel approach to a consistent large-signal and small-signal modeling of power PHEMTs
Author
Wei, C.J. ; Bartle, D. ; Tkachenko, Y.A.
Author_Institution
Alpha Ind. Inc., Woburn, MA, USA
Volume
1
fYear
2001
fDate
2001
Firstpage
252
Abstract
A new method is presented to address the Gm and Gds dispersion in large-signal power PHEMT modeling. Instead of using a single DC current source or two current sources for DC and RF respectively, three 4-D sources as functions of Vdo, Vgo, Vgs, and Vds, are introduced to model DC current, RF Gm and RF Gds independently. A model constructed based on the new approach shows consistency in predicting large-signal performance and small-signal S-parameter response over a wide bias range. The model is verified by comparing the modeled DC, RF Gm and RF Gds, bias-dependent S-parameter, power performance as well as device port waveforms at power driving condition
Keywords
S-parameters; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device models; 4-D sources; DC current; S-parameter response; bias range; consistent large-signal modeling; consistent small-signal modeling; device port waveforms; dispersion; large-signal performance; power PHEMTs; power driving condition; power performance; Circuits; Feedback; Feedforward systems; PHEMTs; Power amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location
Taipei
Print_ISBN
0-7803-7138-0
Type
conf
DOI
10.1109/APMC.2001.985634
Filename
985634
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