• DocumentCode
    2280186
  • Title

    Novel approach to a consistent large-signal and small-signal modeling of power PHEMTs

  • Author

    Wei, C.J. ; Bartle, D. ; Tkachenko, Y.A.

  • Author_Institution
    Alpha Ind. Inc., Woburn, MA, USA
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    252
  • Abstract
    A new method is presented to address the Gm and Gds dispersion in large-signal power PHEMT modeling. Instead of using a single DC current source or two current sources for DC and RF respectively, three 4-D sources as functions of Vdo, Vgo, Vgs, and Vds, are introduced to model DC current, RF Gm and RF Gds independently. A model constructed based on the new approach shows consistency in predicting large-signal performance and small-signal S-parameter response over a wide bias range. The model is verified by comparing the modeled DC, RF Gm and RF Gds, bias-dependent S-parameter, power performance as well as device port waveforms at power driving condition
  • Keywords
    S-parameters; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device models; 4-D sources; DC current; S-parameter response; bias range; consistent large-signal modeling; consistent small-signal modeling; device port waveforms; dispersion; large-signal performance; power PHEMTs; power driving condition; power performance; Circuits; Feedback; Feedforward systems; PHEMTs; Power amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
  • Conference_Location
    Taipei
  • Print_ISBN
    0-7803-7138-0
  • Type

    conf

  • DOI
    10.1109/APMC.2001.985634
  • Filename
    985634