DocumentCode :
22804
Title :
Novel Zn-Doped 
Charge Storage Medium for Light-Erasable In–Ga–Zn–O TFT Memory
Author :
Sun Chen ; Xing-Mei Cui ; Shi-Jin Ding ; Qing-Qing Sun ; Nyberg, Timo ; Shi-Li Zhang ; Wei Zhang
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Volume :
34
Issue :
8
fYear :
2013
fDate :
Aug. 2013
Firstpage :
1008
Lastpage :
1010
Abstract :
A novel Zn-doped Al2O3 (ZAO) layer prepared by atomic layer deposition (ALD) is used as the charge storage medium in an In-Ga-Zn-O thin-film-transistor memory. The gate insulating stack of Al2O3/ZAO/Al2O3 is assembled in a single ALD step, and is found to possess a high electron storage capacity due to very deep defect levels. The memory device shows a threshold voltage shift as large as 6.38 V after a +15V/1 ms programming pulse, and quite good charge retention. Once programmed, the memory can be only light erased. The underlying mechanisms are discussed with the assistance of density functional theory calculations.
Keywords :
aluminium compounds; amorphous semiconductors; atomic layer deposition; density functional theory; gallium compounds; indium compounds; thin film transistors; zinc; ALD; Al2O3:Zn; InGaZnO; ZAO layer; atomic layer deposition; charge storage medium; density functional theory; electron storage capacity; gate insulating stack; light-erasable InGaZnO TFT memory; programming pulse; thin-film-transistor memory; threshold voltage shift; Density functional theory; In-Ga-Zn-O; Zn-doped ${rm Al}_{2}{rm O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2266371
Filename :
6553089
Link To Document :
