Title :
A monolithic K-band MMIC receiver
Author :
Wei, Shu-Fen ; Lin, I-Hsiang ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents the designs and measurement results of a K-band monolithic microwave integrated circuit (MMIC) receiver, including a low noise amplifier and a singly balanced mixer. The MMIC chips are fabricated with a 0.15-μm gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology, carried out by a commercially available foundry
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC mixers; field effect MMIC; gallium arsenide; integrated circuit design; microwave receivers; radio receivers; 0.15 micron; 10 dB; 21 to 26 GHz; 22 dB; 23 GHz; GaAs-based PHEMT MMIC technology; K-band MMIC receiver; SHF; low noise amplifier; monolithic K-band receiver; monolithic microwave integrated circuit receiver; pseudomorphic HEMT MMIC technology; singly balanced mixer; two-stage MMIC LNA; Integrated circuit measurements; Integrated circuit noise; K-band; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave measurements; Monolithic integrated circuits; Noise measurement; Semiconductor device measurement;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985646
