Title :
Three-dimensional profile evolution under low sticking coefficient
Author :
Adalsteinsson, D. ; Sethian, J.A.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
Abstract :
This paper describes a careful numerical study of the effects of low sticking coefficient for two and three dimensional structures. The model for reflection is a cosine re-emission distribution with no dependence on the distribution of incoming particles. We calculate the limiting case for several different initial topologies. We conclude that the limiting profile can not in general be replaced by an isotropic deposition term, and demonstrate the effects of low sticking coefficient on complex structures.
Keywords :
semiconductor process modelling; cosine re-emission distribution; isotropic deposition; numerical technique; particle sticking coefficient; reflection model; three-dimensional profile evolution; topology; two-dimensional structure; Analytical models; Contracts; Integral equations; Laboratories; Level set; Mathematics; Sun; Topology; Vectors; Workstations;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621336
