Title :
HVIGBT physical model analysis during transient
Author :
Ji, Shiqi ; Zhao, Zhengming ; Yuan, Liqiang
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
The insulated gate bipolar transistor (IGBT) physical models were studied in details, especially Hefner model. A HVIGBT transient physical model is presented in terms of the analysis. The parameters of the model are provided for a typical IGBT of FZ600R65KF1. The test experiment was done and the accuracy of the model was verified. Based on the IGBT model, the difference between HVIGBT and LVIGBT was compared and the effect of model parameters on circuit characteristics was analyzed.
Keywords :
insulated gate bipolar transistors; semiconductor device models; HVIGBT; Hefner model; circuit characteristics; insulated gate bipolar transistor; physical model analysis; Analytical models; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Mathematical model; Semiconductor device modeling; Transient analysis;
Conference_Titel :
Electrical Machines and Systems (ICEMS), 2011 International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-1044-5
DOI :
10.1109/ICEMS.2011.6073834
