Burn-in Screening Technology of Power Bare Die

Author

Yun, Huang ; Shaohua, Yang ; Yunfei, En ; Yongjie, Feng

Author_Institution

Nat. Key Lab. of Sci. & Technol., Environ. Testing Res. Inst., Guangzhou, China

fYear

2010

fDate

16-19 Aug. 2010

Firstpage

1255

Lastpage

1258

Abstract

This paper focuses on the Burn-in Screening Technology of Power Bare Die. A temporary carrier that allows the power bare die full temperature testing and burn-in has been described. A suitable improvement multi-bump contact carrier technology has been put forward and Experiment results have shown that the contact resistance of the new carrier decrease 40% significantly. Base on the peak value junction temperature controlling, A more effective power bare die pulse full power burn-in screening technology have been proposed, which power bare dies would be burn-in screened by 100%. So the high quality and reliability requirements for bare power die of MCM and SiP are met..

Keywords

contact resistance; integrated circuit reliability; integrated circuit testing; microassembling; multichip modules; system-in-package; MCM; SiP; contact resistance; full temperature testing; multibump contact carrier technology; peak value junction temperature controlling; power bare die; pulse full power burn-in screening technology; reliability requirements; Contact resistance; Junctions; Reliability; Temperature control; Temperature measurement; Temperature sensors; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4244-8140-8

Type

conf

DOI

10.1109/ICEPT.2010.5582780

Filename

5582780