A 0.35-μm BiCMOS Automatic Gain Control IF Amplifier for Radar Receivers

Author

Quan, Yuan ; Zhigong, Wang ; Qin, Li

Author_Institution

Southeast Univ., Nanjing

fYear

2007

fDate

16-17 Aug. 2007

Firstpage

1375

Lastpage

1378

Abstract

A monolithic automatic gain control (AGC) IF amplifier for radar receivers is designed in AMS 0.35-mum SiGe BiCMOS process. The core circuit of this design is an AGC loop. According to the simulation results, this amplifier is able to process an input IF signal with a dynamic range of 40 dB and its output amplitude keeps a fixed value of 1.5 V. It provides a voltage gain up to 60 dB. This AGC amplifier works well over a frequency range from 175 MHz to 275 MHz with a passband ripple of less than 0.5 dB. This circuit consumes less than 100 mW at .a single 5-V supply and the layout takes 0. 8 mm².

Keywords

BiCMOS integrated circuits; Ge-Si alloys; VHF amplifiers; automatic gain control; radar receivers; semiconductor materials; BiCMOS automatic gain control; IF amplifier; SiGe; SiGe - Interface; frequency 175 MHz to 275 MHz; passband ripple; radar receivers; size 0.35 mum; voltage gain; BiCMOS integrated circuits; Circuit simulation; Dynamic range; Frequency; Gain control; Germanium silicon alloys; Radar; Signal processing; Silicon germanium; Voltage; AGC; BiCMOS; IF Amplifier; radar receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2007 International Symposium on

Conference_Location

Hangzhou

Print_ISBN

978-1-4244-1045-3

Electronic_ISBN

978-1-4244-1045-3

Type

conf

DOI

10.1109/MAPE.2007.4393533

Filename

4393533