Title :
A 0.35-μm BiCMOS Automatic Gain Control IF Amplifier for Radar Receivers
Author :
Quan, Yuan ; Zhigong, Wang ; Qin, Li
Author_Institution :
Southeast Univ., Nanjing
Abstract :
A monolithic automatic gain control (AGC) IF amplifier for radar receivers is designed in AMS 0.35-mum SiGe BiCMOS process. The core circuit of this design is an AGC loop. According to the simulation results, this amplifier is able to process an input IF signal with a dynamic range of 40 dB and its output amplitude keeps a fixed value of 1.5 V. It provides a voltage gain up to 60 dB. This AGC amplifier works well over a frequency range from 175 MHz to 275 MHz with a passband ripple of less than 0.5 dB. This circuit consumes less than 100 mW at .a single 5-V supply and the layout takes 0. 8 mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; VHF amplifiers; automatic gain control; radar receivers; semiconductor materials; BiCMOS automatic gain control; IF amplifier; SiGe; SiGe - Interface; frequency 175 MHz to 275 MHz; passband ripple; radar receivers; size 0.35 mum; voltage gain; BiCMOS integrated circuits; Circuit simulation; Dynamic range; Frequency; Gain control; Germanium silicon alloys; Radar; Signal processing; Silicon germanium; Voltage; AGC; BiCMOS; IF Amplifier; radar receiver;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2007 International Symposium on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4244-1045-3
Electronic_ISBN :
978-1-4244-1045-3
DOI :
10.1109/MAPE.2007.4393533
