Title :
A model of {311} defect evolution based on nucleation theory
Author :
Hobler, G. ; Rafferty, C.S. ; Senkader, S.
Author_Institution :
Lucent Technol., Bell Labs., Murray Hill, NJ, USA
Abstract :
A new model of {311} defect evolution is proposed. The defects are characterized by their mean size and their concentration. The flux between free interstitials and {311} defects is described by an expression obtained by extending the classical theory of nucleation. The model is shown to agree well with the experimental data on {311} defect evolution of Eaglesham et al. and with the boron TED data of Chao et al.
Keywords :
boron; diffusion; elemental semiconductors; interstitials; nucleation; silicon; Si:B; boron TED; interstitial; nucleation theory; silicon; {311} defect evolution model; Boron; Chaos; Distribution functions; Equations; Implants; Predictive models;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621339
