DocumentCode
2281274
Title
A model of {311} defect evolution based on nucleation theory
Author
Hobler, G. ; Rafferty, C.S. ; Senkader, S.
Author_Institution
Lucent Technol., Bell Labs., Murray Hill, NJ, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
73
Lastpage
76
Abstract
A new model of {311} defect evolution is proposed. The defects are characterized by their mean size and their concentration. The flux between free interstitials and {311} defects is described by an expression obtained by extending the classical theory of nucleation. The model is shown to agree well with the experimental data on {311} defect evolution of Eaglesham et al. and with the boron TED data of Chao et al.
Keywords
boron; diffusion; elemental semiconductors; interstitials; nucleation; silicon; Si:B; boron TED; interstitial; nucleation theory; silicon; {311} defect evolution model; Boron; Chaos; Distribution functions; Equations; Implants; Predictive models;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621339
Filename
621339
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