Radiation induced changes in power MOSFET gate-charge measurements

Author

Weber, William ; Schrimpf, Ronald D. ; Meyers, Ronald G. ; Witulski, Arthur F. ; Galloway, Kenneth F.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

fYear

1990

fDate

7-12 Oct. 1990

Firstpage

1673

Abstract

The effects of ionizing-radiation-induced oxide and interface traps on gate-charge measurements of power MOSFETs are discussed. Commercial and radiation hardened power DMOS devices were irradiated, and the oxide trapped charge and charge in interface traps at threshold were determined from the threshold voltage shifts. The build-up of radiation-induced charge was then correlated to changes observed in the gate-charge measurements. The radiation-induced changes in the gate-charge measurements at 500 krad(Si) resulted in a 15% increase in the amount of energy needed to turn the device on and off in a boost power converter.<>

Keywords

insulated gate field effect transistors; power transistors; radiation hardening (electronics); boost power converter; gate-charge measurements; interface traps; ionizing-radiation-induced oxide; power MOSFET; radiation hardened power DMOS devices; Capacitance; Charge measurement; Current measurement; Electron traps; Ionizing radiation; MOSFET circuits; Power MOSFET; Power measurement; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE

Conference_Location

Seattle, WA, USA

Print_ISBN

0-87942-553-9

Type

conf

DOI

10.1109/IAS.1990.152411

Filename

152411