Physical modeling of transient enhanced diffusion and dopant deactivation via extended defect evolution

Simulation of ion implant annealing requires adequate models for a range of processes, including deactivation of dopants and transient enhanced diffusion. It is now well understood that extended defects ({311} defects, dislocation loops, BICs, arsenic precipitates, etc.) play a central role in all these processes. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper. We also present how these processes couple with each other, as well as standard coupled dopant diffusion, by terms of a simple MOSFET structure.