Development of a voltage divider based on quantized Hall resistance arrays for a high DC voltage standard II

Author

Kaneko, N. ; Oe, T. ; Domae, A. ; Urano, C. ; Itatani, T. ; Ishii, H. ; Kiryu, S.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan, Tsukuba

fYear

2008

fDate

8-13 June 2008

Firstpage

692

Lastpage

693

Abstract

A one-chip quantized voltage divider device based on the technology of integration of quantized Hall resistance (QHR) bars on a GaAs/AlGaAs Heterostructure Substrate has been developed. The first experimental QHR voltage divider device, which consists of a series of 20 QHR bars, has been fabricated. A preliminary test in our evaluation study of the device clearly shows that it functions as a voltage multiplier/divider.

Keywords

Hall effect devices; III-V semiconductors; measurement standards; quantum Hall effect; voltage dividers; voltage measurement; voltage multipliers; GaAs-AlGaAs; QHR bars; QHR voltage divider device fabrication; high DC voltage standard II; one-chip quantized voltage divider device; quantized Hall resistance arrays; semiconductor heterostructure substrate; voltage multiplier; Bars; Coatings; Dry etching; Fabrication; Gold; Metrology; Polyimides; Resistors; Standards development; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on

Conference_Location

Broomfield, CO

Print_ISBN

978-1-4244-2399-6

Electronic_ISBN

978-1-4244-2400-9

Type

conf

DOI

10.1109/CPEM.2008.4574968

Filename

4574968