Subthreshold Characteristic of Double-gate Accumulation-mode SOI PMOSFET

Author

Zhengfan, Zhang ; Zhaoji, Li ; Kaizhou, Tan ; Jiabin, Zhang

Author_Institution

Univ. of Electron. Sci.& Technol.of China, Chengdu

fYear

2007

fDate

16-17 Aug. 2007

Firstpage

1446

Lastpage

1449

Abstract

In this paper, an analytical model of subthreshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Possion´s equation and depletion approximation, and the relation of the subthreshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with subthreshold swing is proposed.

Keywords

MOSFET; Poisson equation; approximation theory; interface states; silicon-on-insulator; P-channel SOI; PMOSFET; Possion equation; depletion approximation; double-gate accumulation-mode; gate oxide capacitance; interface trap density; subthreshold characteristic; subthreshold swing; Antennas and propagation; Electromagnetic compatibility; Equations; Integrated circuit technology; Isolation technology; MOSFET circuits; Microwave antennas; Microwave propagation; Microwave technology; Silicon; SOI MOSFET; analytical model; double-gate accumulation-mode; subthreshold swing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2007 International Symposium on

Conference_Location

Hangzhou

Print_ISBN

978-1-4244-1045-3

Electronic_ISBN

978-1-4244-1045-3

Type

conf

DOI

10.1109/MAPE.2007.4393552

Filename

4393552