Title :
Subthreshold Characteristic of Double-gate Accumulation-mode SOI PMOSFET
Author :
Zhengfan, Zhang ; Zhaoji, Li ; Kaizhou, Tan ; Jiabin, Zhang
Author_Institution :
Univ. of Electron. Sci.& Technol.of China, Chengdu
Abstract :
In this paper, an analytical model of subthreshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Possion´s equation and depletion approximation, and the relation of the subthreshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with subthreshold swing is proposed.
Keywords :
MOSFET; Poisson equation; approximation theory; interface states; silicon-on-insulator; P-channel SOI; PMOSFET; Possion equation; depletion approximation; double-gate accumulation-mode; gate oxide capacitance; interface trap density; subthreshold characteristic; subthreshold swing; Antennas and propagation; Electromagnetic compatibility; Equations; Integrated circuit technology; Isolation technology; MOSFET circuits; Microwave antennas; Microwave propagation; Microwave technology; Silicon; SOI MOSFET; analytical model; double-gate accumulation-mode; subthreshold swing;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2007 International Symposium on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4244-1045-3
Electronic_ISBN :
978-1-4244-1045-3
DOI :
10.1109/MAPE.2007.4393552
