Title :
Excellent charge offset stability in Si-based SET transistors
Author :
Zimmerman, N.M. ; Huber, W.H. ; Fujiwara, A. ; Takahashi, Y.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
We have obtained a large improvement in one aspect of the single-electron tunneling (SET) charge offset, Q/sub 0/, problem. The long-term drift of Q/sub 0/ makes it infeasible or impossible to integrate many devices. In contrast to metal-based SET transistors (SETTs), the long-term drift in Si-based SETTs appears to be at least one thousand times smaller (better).
Keywords :
electric charge; elemental semiconductors; semiconductor device measurement; semiconductor device noise; silicon; single electron transistors; stability; tunnelling; SET charge offset stability; Si; Si-based single-electron tunneling transistors; charge offset long-term drift; device noise; metal-based SETT; Capacitance; Electrons; Fluctuations; Laboratories; Monitoring; Motion control; NIST; Noise shaping; Stability; Tunneling;
Conference_Titel :
Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on
Conference_Location :
Ottawa, Ontario, Canada
Print_ISBN :
0-7803-7242-5
DOI :
10.1109/CPEM.2002.1034749
