ICM-an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

Author

Yuhua Cheng ; Kai Chen ; Imai, K. ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

109

Lastpage

112

Abstract

An analytical inversion charge model, ICM, based on a surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effects is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region, of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFETs down to 0.13 /spl mu/m channel length.

Keywords

MOSFET; inversion layers; quantum interference phenomena; semiconductor device models; surface potential; 0.13 mum; ICM; accurate modeling; analytical inversion charge model; channel length; gate oxide MOSFETs; low power circuits; moderate inversion region; poly-gate depletion; quantum mechanical effect correction; strong inversion; surface potential solution; weak inversion; Analytical models; Charge carrier density; Charge measurement; Current measurement; Doping; MOSFETs; Quantization; Semiconductor process modeling; Statistics; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621348

Filename

621348