Title :
Mesoscale modeling of diffusion in polycrystalline structures
Author :
Bassman, L.C. ; Ibrahim, N.R. ; Pinsky, P.M. ; Saraswat, K.C. ; Deal, M.D.
Author_Institution :
Dept. of Mech. Eng., Stanford Univ., CA, USA
Abstract :
We present a new diffusion simulation methodology which has been developed as part of our BackEnd Simulation Tool (BEST) effort. This approach uses the finite element method to address issues critical for modeling polycrystalline materials at the mesoscopic scale. We have included separate grain and grain boundary diffusion, spatially continuous material properties and the concept of equilibrium concentration.
Keywords :
finite element analysis; grain boundary diffusion; mesoscopic systems; semiconductor process modelling; BEST; BackEnd Simulation Tool; equilibrium concentration; finite element method; grain boundary diffusion; grain diffusion; mesoscale model; polycrystalline material; Aluminum; Computational modeling; Crystalline materials; Finite element methods; Grain boundaries; Grain size; Impurities; Mechanical engineering; Silicides; Steady-state;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621359
