Harmonic balance device analysis of an LDMOS RF power amplifier with parasitics and matching network

Author

Rotella, F.M. ; Zhiping Yu ; Dutton, R. ; Troyanovsky, B. ; Ma, G.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

157

Lastpage

159

Abstract

This paper discusses a harmonic balance simulation involving a high power LDMOS device, bias circuitry and matching network. The paper begins with a discussion of the device and circuit configuration as well as the requirements for simulation. Next the paper describes the simulation algorithms and simulator structure in order to meet the requirements. PISCES is used as the basis and around it are added libraries for harmonic balance simulation and circuit boundary conditions. Finally, simulation results are presented. The experimental and simulated response of the power gain and power added efficiency of an RF power amplifier are shown.

Keywords

circuit analysis computing; impedance matching; nonlinear network analysis; power MOSFET; power amplifiers; radiofrequency amplifiers; semiconductor device models; LDMOS RF power amplifier; PISCES; bias circuitry; circuit boundary conditions; harmonic balance device analysis; harmonic balance simulation; high power LDMOS device; matching network; parasitics; power added efficiency; power gain; simulation algorithms; Bonding; Circuit simulation; Frequency domain analysis; Harmonic analysis; Packaging; Power amplifiers; Power system harmonics; Radio frequency; Radiofrequency amplifiers; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621361

Filename

621361