Title :
A Investigation of E/W Cycle Characteristics for 2y-nm MLC NAND Flash Memory Devices
Author :
Jeong, YeonJoo ; Lee, Sangjo ; Cho, Sunghoon ; Kim, Pyunghwa ; Park, Milim ; Lee, SungPyo ; Shim, Hyunyoung ; Cho, Myoung Kwan ; Ahn, Kun-Ok ; Bae, Gihyun ; Park, Sungwook
Author_Institution :
Flash Dev. Div., Hynix Semicond. Inc., Cheongju, South Korea
Abstract :
In this paper, the challenges of NAND flash memory devices with E/W cycling characteristics are discussed. The large VTH shift in 2y-nm technology is investigated with various causes such as air-gap, poly2 valley plug gap-fill and string current. The countermeasures including process and operation algorithm are also exhibited to improve the reliability of 2y-nm NAND Flash memory device.
Keywords :
NAND circuits; flash memories; integrated circuit reliability; 2y-nm MLC NAND flash memory device reliability; 2y-nm technology; E-W cycle characteristics; air-gap; poly2 valley plug gap-fill; string current; Air gaps; Capacitance-voltage characteristics; Degradation; Flash memory; Junctions; Plugs; Reliability;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213619
