• DocumentCode
    2282140
  • Title

    Impact of Forming Pulse Geometry and Area Scaling on Forming Kinetics and Stability of the Low Resistance State in HfO2-Based RRAM Cells

  • Author

    Lorenzi, P. ; Rao, R. ; Irrera, F.

  • Author_Institution
    DIET, Sapienza Univ. of Rome, Rome, Italy
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work key aspects of the electroforming in RRAM cells with HfO2 oxide and Pt electrodes are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time and the resistance after forming as a function of the voltage pulse geometry and the device area.
  • Keywords
    hafnium compounds; random-access storage; HfO2; Pt; RRAM cells; electrodes; forming kinetics; forming pulse geometry; forming stability; low resistance state; transient measurements; voltage pulse geometry; Electrical resistance measurement; Electrodes; Geometry; Hafnium compounds; Radio frequency; Resistance; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2012 4th IEEE International
  • Conference_Location
    Milan
  • Print_ISBN
    978-1-4673-1079-6
  • Type

    conf

  • DOI
    10.1109/IMW.2012.6213621
  • Filename
    6213621
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2282140