Title :
Impact of Forming Pulse Geometry and Area Scaling on Forming Kinetics and Stability of the Low Resistance State in HfO2-Based RRAM Cells
Author :
Lorenzi, P. ; Rao, R. ; Irrera, F.
Author_Institution :
DIET, Sapienza Univ. of Rome, Rome, Italy
Abstract :
In this work key aspects of the electroforming in RRAM cells with HfO2 oxide and Pt electrodes are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time and the resistance after forming as a function of the voltage pulse geometry and the device area.
Keywords :
hafnium compounds; random-access storage; HfO2; Pt; RRAM cells; electrodes; forming kinetics; forming pulse geometry; forming stability; low resistance state; transient measurements; voltage pulse geometry; Electrical resistance measurement; Electrodes; Geometry; Hafnium compounds; Radio frequency; Resistance; Voltage measurement;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213621
