Title :
An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices
Author :
Park, Byoungjun ; Cho, Sunghoon ; Park, Jiyul ; Kim, Pyunghwa ; Lee, Sangjo ; Park, Milim ; Park, Min Sang ; Park, Sukkwang ; Yang, Hae Chang ; Park, Sungjo ; Lee, Yunbong ; Cho, Myoung Kwan ; Ahn, Kun-Ok ; Bae, Gihyun ; Park, Sungwook
Author_Institution :
Flash Dev. Div., Hynix Semicond. Inc., Cheongju, South Korea
Abstract :
In this paper, we discuss about the abnormal program phenomena of sub-20 nm NAND Flash memory devices based on floating gates. These phenomena are varied with the doping concentration and isolations. In sub-20 nm NAND technology, the optimized S/D junction and well-controlled dopant profiles under channel should be adopted to improve reliability characteristics.
Keywords :
CMOS logic circuits; NAND circuits; doping profiles; flash memories; integrated circuit reliability; NAND flash memory devices; abnormal program phenomena; dopant profiles; doping concentration; floating gate; reliability characteristic; source-drain junctions; Boosting; Capacitance; Doping; Electric potential; Flash memory; Junctions; Nonvolatile memory;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213622
