A Dynamic Programming Method with Programming Current Clamped in Embedded P-Channel SONOS Flash Memory

Author

Fang, Shang-Wei ; Chen, Ying-Je ; Liu, Cheng-Jye ; Lee, Zheng-Jie ; Kuo, Zhi-Bin ; Liao, Hong-Yi ; Tsai, Yu-Shiung ; Sun, Wein-Town ; Lin, Yuan-Tai

Author_Institution

SONOS Technol. Res. Program, eMemory Technol. Inc., Jhubei, Taiwan

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

4

Abstract

A dynamic programming method of Channel Hot Hole Induced Hot Electron (CHHIHE) injection with programming-current-clamped (PCC) scheme on P-channel SONOS application is proposed in this paper. With the PCC scheme, a better programming efficiency and device reliability can be realized, and consequently up to 85% programming current reduction and over one order of retention lifetime improvement can be achieved. Moreover, it can also provide a tightened program state distribution with the benefit of lower programming power consumption, smaller high voltage pumping circuit area and better read sensing window.

Keywords

dynamic programming; flash memories; power consumption; CHHIHE injection; PCC scheme; channel hot hole induced hot electron injection; dynamic programming method; embedded P-channel SONOS flash memory; program state distribution; programming current clamped; programming power consumption; programming-current-clamped scheme; Arrays; Dynamic programming; Hot carriers; Programming; Reliability; SONOS devices; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213628

Filename

6213628