DocumentCode
2282255
Title
Base doping profile optimization including carriers velocity saturation effect
Author
Khanduri, Gagan ; Panwar, Brishbhan
Author_Institution
Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi
fYear
2007
fDate
22-25 March 2007
Firstpage
574
Lastpage
578
Abstract
This work presents an iterative approach to optimize the base doping of conventional Si BJTs for practical base profiles having retarding field region near emitter-base junction. The analysis also presents the effect of minority carrier velocity saturation on total base transit time for homojunction bipolar transistors.
Keywords
bipolar transistors; doping profiles; iterative methods; semiconductor doping; base doping profile optimization; carriers velocity saturation effect; emitter-base junction; homojunction bipolar transistors; Acceleration; Bipolar transistors; Constraint optimization; Delay effects; Doping profiles; Electrons; Iterative methods; Mathematical programming; Mathematics; Optimization methods;
fLanguage
English
Publisher
ieee
Conference_Titel
SoutheastCon, 2007. Proceedings. IEEE
Conference_Location
Richmond, VA
Print_ISBN
1-4244-1028-2
Electronic_ISBN
1-4244-1029-0
Type
conf
DOI
10.1109/SECON.2007.342968
Filename
4147498
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