• DocumentCode
    2282271
  • Title

    Simultaneous optimization of doping profile and Ge-dose in base in SiGe HBTs

  • Author

    Khanduri, Gagan ; Panwar, Brishbhan

  • Author_Institution
    Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi
  • fYear
    2007
  • fDate
    22-25 March 2007
  • Firstpage
    579
  • Lastpage
    583
  • Abstract
    This work presents an approach to optimize the base doping and Ge-dose inside the base of SiGe HBTs using the fixed point iterative methodology and includes the effect of minority carrier velocity saturation on total base transit time for SiGe HBTs. It is shown that shifted-Ge approach and linear Ge-profile in base can lead to simultaneous optimization of Ge-dose and base dopant distribution for minimum base transit time.
  • Keywords
    Ge-Si alloys; doping profiles; heterojunction bipolar transistors; optimisation; SiGe; base dopant distribution; doping profile; fixed point iterative methodology; heterojunction bipolar transistor; minimum base transit time; minority carrier velocity saturation; optimization; Bipolar transistors; Delay effects; Doping profiles; Germanium silicon alloys; Iterative methods; Niobium; Optimization methods; Photonic band gap; Quasi-doping; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SoutheastCon, 2007. Proceedings. IEEE
  • Conference_Location
    Richmond, VA
  • Print_ISBN
    1-4244-1029-0
  • Electronic_ISBN
    1-4244-1029-0
  • Type

    conf

  • DOI
    10.1109/SECON.2007.342969
  • Filename
    4147499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2282271