• DocumentCode
    2282369
  • Title

    Investigation on fabricating high SiC volume fraction of electronic package shell by means of semi-solid forming

  • Author

    Wang Kai-kun ; Li Jian ; Li Ming-rong ; Xie Qi-lin ; Wang Fu-yu

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Univ. of Sci. & Technol. Beijing, Beijing, China
  • fYear
    2010
  • fDate
    16-19 Aug. 2010
  • Firstpage
    394
  • Lastpage
    398
  • Abstract
    Based on the research of modern electronic packaging materials, Semi-solid forming technology was used to fabricate electronic packaging shell in this study. Packaging material of SiC reinforced A356 aluminum alloy was prepared by mechanical mixing method and the SiCp/Al composite billet was formed by means of thixo-forging to manufacture the electronic packaging shell. The numerical simulation was conducted for investigating the process of thixo-extrusion with SiCp/A356 composites. Then microstructure of the produced parts and simulation results were investigated. The results showed that after being heated to 600°C and held for 3 hours, SiCp had good compatibility with A356 aluminum alloy and the SiCp/A356 composite billet could meet the requirements of thixo-forging. The investigation showed that thixoforming technology could be used in producing electronic package shell with high SiC volume fraction from SiCp/A356 composites.
  • Keywords
    aluminium alloys; electronics packaging; silicon compounds; thixoforming; A356 aluminum alloy; SiC; composite billet; electronic package shell; high SiC volume fraction; mechanical mixing method; semi-solid forming; temperature 600 degC; thixo-extrusion; time 3 hour; Billets; Cavity resonators; Electronics packaging; Silicon carbide; Slurries; Solids; Electronic packaging shell; High SiC volume fraction; Microstructure; Numerical simulation; Semi-solid forming; SiCp/A356 composites;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-8140-8
  • Type

    conf

  • DOI
    10.1109/ICEPT.2010.5582849
  • Filename
    5582849