DocumentCode :
2282372
Title :
Embedded Nonvolatile Memories: A Key Enabler for Distributed Intelligence
Author :
Baker, Kelly
Author_Institution :
NVM Technol. Dev., Automotive, Ind. & Multi-Market Solutions Group, Freescale Semicond., Austin, TX, USA
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
Embedded NVM (eNVM) has become a key component of many modern systems, enabling software-based control to be embedded into a wide range of applications. This paper surveys some of the market segments driving eNVM growth, the unique requirements for eNVM (versus stand-alone flash), the optimization choices, current solutions including recent 1T NOR and split-gate TFS eNVM, and future trends. While conventional embedded flash is likely to continue as the industry workhorse for eNVM, there is a significant opportunity for 1T-1R cells, such as MRAM, to impact the eNVM market if they are optimized to meet the unique eNVM requirements, including wide temperature range and robust operation.
Keywords :
embedded systems; flash memories; random-access storage; 1T NOR; 1T-1R cells; MRAM; distributed intelligence; eNVM growth; eNVM market; embedded NVM; embedded flash; embedded nonvolatile memories; optimization; software-based control; split-gate TFS eNVM; stand-alone flash; temperature range; Arrays; Automotive engineering; Logic gates; Nonvolatile memory; Random access memory; Robustness; Split gate flash memory cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
Type :
conf
DOI :
10.1109/IMW.2012.6213637
Filename :
6213637
Link To Document :
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