Title :
Extended anisotropic mobility model applied to 4H/6H-SiC devices
Author :
Lades, M. ; Wachutka, G.
Author_Institution :
Phys. of Electrotechnol., Tech. Univ. of Munich, Germany
Abstract :
We present an extended mobility model that accounts for anisotropic current transport along non-equivalent crystallographic axes for a given wafer orientation. Using this model we investigated the influence of anisotropic effects on the device characteristics of 4H- and 6H-SiC transistor structures (JFET, UMOS, DIMOS). Dependent on the polytype of the underlying material and the device structure, large variations in the device behavior may result from anisotropic mobility. This influence is strongest in the 6H-SiC DIMOS.
Keywords :
carrier mobility; junction gate field effect transistors; power MOSFET; power transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC devices; 6H-SiC devices; DIMOS; JFET; SiC; SiC transistor structures; UMOS; anisotropic current transport; device characteristics; extended anisotropic mobility model; nonequivalent crystallographic axes; wafer orientation; Anisotropic magnetoresistance; Charge carrier processes; Crystalline materials; Crystallography; Electron mobility; Physics; Semiconductor device modeling; Silicon carbide; Tensile stress; Thermal conductivity;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621364
