Extended anisotropic mobility model applied to 4H/6H-SiC devices

Author

Lades, M. ; Wachutka, G.

Author_Institution

Phys. of Electrotechnol., Tech. Univ. of Munich, Germany

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

169

Lastpage

171

Abstract

We present an extended mobility model that accounts for anisotropic current transport along non-equivalent crystallographic axes for a given wafer orientation. Using this model we investigated the influence of anisotropic effects on the device characteristics of 4H- and 6H-SiC transistor structures (JFET, UMOS, DIMOS). Dependent on the polytype of the underlying material and the device structure, large variations in the device behavior may result from anisotropic mobility. This influence is strongest in the 6H-SiC DIMOS.

Keywords

carrier mobility; junction gate field effect transistors; power MOSFET; power transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC devices; 6H-SiC devices; DIMOS; JFET; SiC; SiC transistor structures; UMOS; anisotropic current transport; device characteristics; extended anisotropic mobility model; nonequivalent crystallographic axes; wafer orientation; Anisotropic magnetoresistance; Charge carrier processes; Crystalline materials; Crystallography; Electron mobility; Physics; Semiconductor device modeling; Silicon carbide; Tensile stress; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621364

Filename

621364