Advanced Hot-Carrier Injection Programming Scheme for Sub 20nm NAND Flash Cell and beyond

Author

Ahn, Sang-Tae ; Mun, Kyungsik ; Lee, Keun Woo ; Cho, Gyuseog ; Park, Sung-Kye ; Lee, Seokkiu ; Hong, Sungjoo

Author_Institution

R&D Div., Hynix Semicond. Inc., Icheon, South Korea

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

4

Abstract

A novel hot-carrier programming method for 20-nm-node technology NAND Flash cell is presented. In order to suppress the program disturb and the large power consumption, we utilized the self-channel boosting techniques with floated WLn-1, switching SSL, and a sufficiently high local field to cause efficient hot-carrier injection in NAND string. This method has been successfully demonstrated in the 20-nm-node NAND Flash cells, along with comprehensive studies on various bias conditions and algorithm. It would be very attractive for further scaling in NAND Flash memories beyond 20-nm technology.

Keywords

NAND circuits; flash memories; hot carriers; NAND flash cell; NAND flash memories; NAND string; advanced hot-carrier injection programming; efficient hot-carrier injection; power consumption; self-channel boosting technique; size 20 nm; Boosting; Flash memory; Hot carrier injection; Human computer interaction; IEEE Potentials; Programming; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213642

Filename

6213642