Title :
Hot Forming to Improve Memory Window and Uniformity of Low-Power HfOx-Based RRAMs
Author :
Butcher, B. ; Bersuker, G. ; Young-Fisher, K.G. ; Gilmer, D.C. ; Kalantarian, A. ; Nishi, Y. ; Geer, R. ; Kirsch, P.D. ; Jammy, R.
Author_Institution :
SEMATECH, Albany, NY, USA
Abstract :
A method of forming RRAM devices at elevated temperatures (hot forming) is proposed. By drastically reducing time-to-forming, this hot forming method enables forming to be performed using low constant voltage biases, which is shown to increase resistance of the conductive filament, lower operational current, increase memory window and improve device-to-device uniformity.
Keywords :
electric resistance; hafnium compounds; low-power electronics; random-access storage; temperature; HfO; RRAM device; conductive filament; device-to-device uniformity; elevated temperature; hot forming; low constant voltage bias; low-power RRAM; memory window; operational current; resistance; time-to-forming; Hafnium compounds; Integrated circuits; Performance evaluation; Resistance; Switches; Temperature distribution;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213647
